Profile
Miles Haines
Partner / Southampton
Practice & Professional Experience
Miles has worked in private practice since 1992. His extensive technical and commercial hands-on experience makes him well suited to academic spin-out and SME clients. He also has extensive experience with company creation and development, especially from universities.
Miles specialises in physics-based technology areas and software, optics, semiconductors, oceanography, medical imaging, nanotechnology, bio-informatics and crystallography where a physics background is relevant. He handles a balance of patent procurement and enforcement work in the areas of patent drafting and prosecution, advising on infringement, validity and licensing, commercial negotiation and patent and software copyright enforcement.
Miles conducted industrial research with British Telecom Research Labs, Martlesham Heath and GEC Research Labs, Wembley. Miles joined D Young & Co in 1998 and became a Partner in 2001. He is fluent in German.
Qualifications
BSc in Physics with Semiconductor Science, Hull University.
PhD in Semiconductor Optics, Heriot-Watt University.
Royal Society Research Fellow, Schottky Institute for Semiconductor Electronics, Technical University of Munich.
Chartered Physicist 1994.
European Patent Attorney 1998.
Chartered Patent Attorney 1999.
European Design Attorney.
Memberships
Fellow Chartered Institute of Patent Attorneys (CIPA).
European Patent Institute (epi).
Institute of Physics (IOP).
Selected Publications
Author of 14 scientific publications in the field of semiconductor optical devices including:
M.Haines et al "Raman characterization of molecular beam epitaxy grown GaAlSb on GaSb and GaAs substrates" J.Appl.Phys. 65,1942(1988).
M.Haines et al "Optical phonon energies in pseudomorphic alloy strained layers" Appl.Phys.Letts. 55,849(1989).
M.Haines et al "Proposal for an all semiconductor combined spectrometer and detector" Phys.Rev.Letts. 64,48(1990).
M.Haines et al "Exciton binding energy maximum in GaInAs/GaAs quantum wells" Phys.Rev.B 43,11944(1991).
M.Haines et al "Observation of interface plasmon modes in (GaAl)As heterostructures by Raman spectroscopy" Int.Conf.Phys. Semiconductors, Peking, China, August 1992 (World Scientific 1992).
M.Haines et al "Angular Dispersion of GaAs Optical phonons in GaAs/AlAs superlattices" Proceedings of the NATO Advanced Research Workshop on Phonons in Nanostructures, Barcelona 15-18 September 1992 (Kluwer).
